Bfu768f npn wideband silicon germanium rf transistor

BFU768F
NPN wideband silicon germanium RF transistor
Rev. 1.2 — 24 December 2012
Product data sheet
1. Product
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
 Low noise high linearity RF transistor 110 GHz fT silicon germanium technology Optimal linearity for low current and high gain Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:  Low current: 10.8 mA Noise figure < 1.2 dB Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz Very fast on/off times Unconditionally stable  Higher IP3, higher gain or lower noise figure possible with different application circuits 1.3 Applications
 High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX ZigBee NXP Semiconductors
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Quick reference data
Wi-Fi LNA applications circuits; IC = 10.8 mA; VCE = 2.1 V; Tamb = 25 C; unless otherwise specified Symbol Parameter
Conditions
2. Pinning
information
Discrete pinning
Description
Simplified outline
Graphic symbol
3. Ordering
information
Ordering information
Type number
Description
plastic surface-mounted flat pack package; reverse All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
4. Marking
Type number
Description
5. Limiting
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter
Conditions
Tsp is the temperature at the solder point of the emitter lead.
6. Thermal
characteristics
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to solder point Power derating curve
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
7. Characteristics
Characteristics
Wi-Fi LNA applications circuits; IC = 10.8 mA; VCE = 2.1 V; Tamb = 25 C; unless otherwise specified Parameter
Conditions
V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Collector current as a function of
DC current gain as a function of collector
collector-emitter voltage; typical values
current; typical values
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
VCE = 1 V; f = 2 GHz; Tamb = 25 C.
Collector-base capacitance as a function of
Transition frequency as a function of collector
collector-base voltage; typical values
current; typical values
VCE = 1 V; IC = 8 mA; Tamb = 25 C.
VCE = 1 V; IC = 50 mA; Tamb = 25 C.
Gain as a function of frequency; typical values
Gain as a function of frequency; typical values
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
IC = 12 mA; VCE = 2 V; Tamb = 25 C.
Minimum noise figure as a function of
Minimum noise figure as a function of
collector current; typical values
frequency; typical values
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
8. Package
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
REFERENCES
EUROPEAN
ISSUE DATE
PROJECTION
Fig 10. Package outline SOT343F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
9. Abbreviations
Abbreviations
Description
Unlicensed National Information Infrastructure Worldwide Interoperability for Microwave Access 10. Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
• L(1dB) output power at 1 dB gain compression: replaced dB by dBm
• Status distribution changed.
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
11. Legal information
11.1 Data
Document status[1][2]
Product status[3]
Definition
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL . 11.2 Definitions
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Draft — The document is a draft version only. The content is still under
malfunction of an NXP Semiconductors product can reasonably be expected internal review and subject to formal approval, which may result in to result in personal injury, death or severe property or environmental modifications or additions. NXP Semiconductors does not give any damage. NXP Semiconductors and its suppliers accept no liability for representations or warranties as to the accuracy or completeness of inclusion and/or use of NXP Semiconductors products in such equipment or information included herein and shall have no liability for the consequences of applications and therefore such inclusion and/or use is at the customer’s own Short data sheet — A short data sheet is an extract from a full data sheet
Applications — Applications that are described herein for any of these
with the same product type number(s) and title. A short data sheet is intended products are for illustrative purposes only. NXP Semiconductors makes no for quick reference only and should not be relied upon to contain detailed and representation or warranty that such applications will be suitable for the full information. For detailed and full information see the relevant full data specified use without further testing or modification. sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product Product specification — The information and data provided in a Product
design. It is customer’s sole responsibility to determine whether the NXP data sheet shall define the specification of the product as agreed between Semiconductors product is suitable and fit for the customer’s applications and NXP Semiconductors and its customer, unless NXP Semiconductors and products planned, as well as for the planned application and use of customer have explicitly agreed otherwise in writing. In no event however, customer’s third party customer(s). Customers should provide appropriate shall an agreement be valid in which the NXP Semiconductors product is design and operating safeguards to minimize the risks associated with their deemed to offer functions and qualities beyond those described in the NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the 11.3 Disclaimers
customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Limited warranty and liability — Information in this document is believed to
Semiconductors products in order to avoid a default of the applications and be accurate and reliable. However, NXP Semiconductors does not give any the products or of the application or use by customer’s third party representations or warranties, expressed or implied, as to the accuracy or customer(s). NXP does not accept any liability in this respect.
completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no Limiting values — Stress above one or more limiting values (as defined in
responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC 60134) will cause permanent source outside of NXP Semiconductors.
damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in In no event shall NXP Semiconductors be liable for any indirect, incidental, the Recommended operating conditions section (if present) or the punitive, special or consequential damages (including - without limitation - lost Characteristics sections of this document is not warranted. Constant or profits, lost savings, business interruption, costs related to the removal or repeated exposure to limiting values will permanently and irreversibly affect replacement of any products or rework charges) whether or not such the quality and reliability of the device.
damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Terms and conditions of commercial sale — NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason products are sold subject to the general terms and conditions of commercial whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance agreed in a valid written individual agreement. In case an individual with the Terms and conditions of commercial sale of NXP Semiconductors.
agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to Right to make changes — NXP Semiconductors reserves the right to make
applying the customer’s general terms and conditions with regard to the changes to information published in this document, including without purchase of NXP Semiconductors products by customer.
limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Export control — This document as well as the item(s) described herein
product for such automotive applications, use and specifications, and (b) may be subject to export control regulations. Export might require a prior whenever customer uses the product for automotive applications beyond authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Quick reference data — The Quick reference data is an extract of the
liability, damages or failed product claims resulting from customer design and product data given in the Limiting values and Characteristics sections of this use of the product for automotive applications beyond NXP Semiconductors’ document, and as such is not complete, exhaustive or legally binding.
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
Translations — A non-English (translated) version of a document is for
states that this specific NXP Semiconductors product is automotive qualified, reference only. The English version shall prevail in case of any discrepancy the product is not suitable for automotive use. It is neither qualified nor tested between the translated and English versions.
in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
11.4 Trademarks
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer Notice: All referenced brands, product names, service names and trademarks (a) shall use the product without NXP Semiconductors’ warranty of the are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
NXP Semiconductors
NPN wideband silicon germanium RF transistor
13. Contents
Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’. NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected] Date of release: 24 December 2012
Document identifier: BFU768F

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